Electronic device

ABSTRACT

An electronic device includes a lens, an optical filter asymmetric to an optical axis of the lens, and an image sensor including a visible light image sensor and a non-visible light image sensor. The optical filter has an opening and is configured to transmit visible light and block at least one type of non-visible light. The visible light image sensor is configured to sense the visible light and the non-visible light image sensor is configured to sense the at least one type of non-visible light.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2015-0137742, filed in the Korean IntellectualProperty Office, on Sep. 30, 2015, the entire contents of which areincorporated herein by reference.

BACKGROUND

1. Field

Example embodiments relate to an electronic device.

2. Description of the Related Art

An image device including an image sensor configured to store an imageas an electric signal, for example, a digital camera or a camcorder, hasbeen widely used.

On the other hand, as technology of increasing resolution and accuracyhas been developed, this image device may produce a blurry image focusdue to fine motion of an object or the image device itself while takinga photograph, and accordingly, various auto-focusing technologies havebeen researched to solve this problem.

However, the auto-focusing technologies may hardly obtain the distanceinformation of objects positioned at different locations.

SUMMARY

Example embodiments provide an electronic device configured to reducelight loss of a visible light image and obtain distance information ofan object.

According to example embodiments, an electronic device includes a lens,an optical filter asymmetric to an optical axis of the lens, and animage sensor including a visible light image sensor and a non-visiblelight image sensor. The optical filter has an opening and is configuredto transmit visible light and block at least one type of non-visiblelight. The visible light image sensor is configured to sense the visiblelight and the non-visible light image sensor is configured to sense atleast one type of non-visible light.

The at least one type of non-visible light may be one of infrared lightand ultraviolet light.

The visible light image sensor may obtain a visible light image from thevisible light passing the optical filter including the opening of theoptical filter, the non-visible light image sensor may obtain anon-visible light image from the non-visible light passing the openingof the optical filter, and distance information of an object may beobtained from a position difference between the visible light image andthe non-visible light image.

The opening may be at one side of the lens based on the optical axis ofthe lens.

The opening may be one of circular and polygonal.

The optical filter may be between the lens and the image sensor.

The image sensor may include a plurality of pixels, and a distancebetween a center of the optical filter and a center of the opening maybe larger than a size of one of the plurality of pixels.

The visible light image sensor and the non-visible light image sensormay be stacked.

The non-visible light image sensor may be closer to the optical filterthan the visible light image sensor.

The visible light image sensor may include a blue light detecting deviceconfigured to one of selectively sense and selectively absorb light in ablue wavelength region, a green light detecting device configured to oneof selectively sense and selectively absorb light in a green wavelengthregion, and a red light detecting device configured to one ofselectively sense and selectively absorb light in a red wavelengthregion.

The blue light detecting device, the green light detecting device andthe red light detecting device may be independently one of aphoto-sensing device and a photoelectronic device.

At least one of the blue light detecting device, the green lightdetecting device and the red light detecting device may be thephoto-sensing device, and the visible light image sensor may furtherinclude a color filter overlapping the photo-sensing device.

At least one of the blue light detecting device, the green lightdetecting device and the red light detecting device may be thephotoelectronic device, and the photoelectronic device may include apair of electrodes facing each other and a visible light absorptionlayer between the pair of electrodes and configured to selectivelyabsorb one of the light in the blue wavelength region, the greenwavelength region and the red wavelength region.

The non-visible light image sensor may be a non-visible light detectingdevice configured to one of selectively sense and selectively absorb oneof infrared light and ultraviolet light, and the non-visible lightdetecting device may be one of a photo-sensing device and aphotoelectronic device.

The non-visible light detecting device may be the photoelectronicdevice, and the photoelectronic device may include a pair of electrodesfacing each other and a non-visible light absorption layer between thepair of electrodes and configured to selectively absorb the one ofinfrared light and ultraviolet light.

The non-visible light absorption layer may include at least one organicmaterial.

The image sensor may include a plurality of unit pixel groups repeatedlyarranged along a row and a column, and each of the plurality of unitpixel groups may include a non-visible light pixel connected to thenon-visible light image sensor, a blue pixel including the blue lightdetecting device, a green pixel including the green light detectingdevice, and a red pixel including the green light detecting device.

The non-visible light pixel may be one of an infrared light pixel and anultraviolet light pixel.

One of the blue pixel, the green pixel, and the red pixel may have adifferent area from the other of the plurality of pixels.

The green pixel may have a larger area than the blue pixel and the redpixel.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view showing a part of an electronic deviceaccording to example embodiments,

FIG. 2 is a schematic view showing the cross-section of an optical filmof the electronic device of FIG. 1,

FIG. 3 is a schematic view showing the position of an image depending onan object distance,

FIG. 4 is a schematic view showing a relationship between an image shiftand the object distance in the electronic device of FIG. 1,

FIG. 5 is an example showing the image shift according to exampleembodiments,

FIG. 6 is a graph showing a relationship between an image shift and theobject distance in accordance with example embodiments,

FIG. 7 is a top plan view showing a unit pixel group in an image sensoraccording to example embodiments,

FIG. 8 is a top plan view schematically showing the unit pixel group ofthe image sensor according to example embodiments,

FIG. 9 is a cross-sectional view schematically showing an image sensorof FIG. 8, and

FIG. 10 is a top plan view showing a unit pixel group of an image sensoraccording to example embodiments.

DETAILED DESCRIPTION

Example embodiments of the present inventive concepts will hereinafterbe described in detail, and may be more easily performed by those whohave common knowledge in the related art. However, this disclosure maybe embodied in many different forms and is not construed as limited tothe example embodiments set forth herein.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. Like reference numerals designate likeelements throughout the specification. It will be understood that whenan element such as a layer, film, region, or substrate is referred to asbeing “on” another element, it can be directly on the other element orintervening elements may also be present. In contrast, when an elementis referred to as being “directly on” another element, there are nointervening elements present.

It will be understood that when an element is referred to as being “on,”“connected” or “coupled” to another element, it can be directly on,connected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyon,” “directly connected” or “directly coupled” to another element,there are no intervening elements present. As used herein the term“and/or” includes any and all combinations of one or more of theassociated listed items. Further, it will be understood that when alayer is referred to as being “under” another layer, it can be directlyunder or one or more intervening layers may also be present. Inaddition, it will also be understood that when a layer is referred to asbeing “between” two layers, it can be the only layer between the twolayers, or one or more intervening layers may also be present.

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the example term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of exampleembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, example embodiments should not be construed aslimited to the particular shapes of regions illustrated herein but areto include deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofexample embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, such as those defined incommonly-used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein. As used herein, expressions such as“at least one of,” when preceding a list of elements, modify the entirelist of elements and do not modify the individual elements of the list.

Hereinafter, an electronic device according to example embodiments isdescribed referring to drawings. The electronic device may be, forexample, an image device (e.g., a camera or a camcorder).

FIG. 1 is a schematic view showing a part of an electronic deviceaccording to example embodiments and FIG. 2 is a schematic view showinga cross-section of an optical film of the electronic device of FIG. 1.

Referring to FIG. 1, an electronic device according to exampleembodiments includes a lens 400, an optical filter 500 and an imagesensor 100.

The lens 400 may be a focusing lens and have no particular limitation,as long as incident light is controlled in terms of a direction andcollected.

The optical filter 500 may selectively transmit light depending on awavelength region, that is, light in a visible ray region (hereinafter,referred to as ‘visible light’) (Vis) but block at least a part of theother light except for the light in the visible ray region (Non-Vis)(hereinafter, referred to as ‘non-visible light’). Herein, the visiblelight may be light in a wavelength region of about 400 nm to about 700nm, and the non-visible light may be light in a wavelength region ofless than about 400 nm and/or greater than about 700 nm. For example,the non-visible light may be light in an ultraviolet (UV) region of lessthan about 400 nm (hereinafter, referred to as ‘ultraviolet light’) orlight in an infrared (IR) region of greater than about 700 nm(hereinafter, referred to as ‘infrared light’).

The optical filter 500 may have, for example, a structure of stacking aplurality of layers having a different refractive index and/orreflectance, and herein, the refractive index, reflectance, thickness,and number of the layers may be respectively set to transmit visiblelight but to reflect and/or absorb infrared light or visible light.

The optical filter 500 may be, for example, formed of a materialselectively absorbing or reflecting the infrared light or ultravioletlight or coated with the material selectively absorbing or reflectingthe infrared light or ultraviolet light on a transparent substrate.

The optical filter 500 has an opening 500 a.

The opening 500 a may be one or greater than or equal to about two andasymmetrically positioned based on the optical axis A of the lens 400.The opening 500 a may be positioned at one side of the lens 400 based onthe optical axis A as illustrated in FIG. 1, for example. For example,although not illustrated, more than two openings 500 a may beasymmetrically positioned based on the optical axis A of the lens 400.For example, the opening 500 a may be asymmetrically positioned as adifferent shape and/or a different size based on the optical axis A ofthe lens 400.

The opening 500 a may be circular or polygonal, but is not limitedthereto. The opening 500 a has no particular limitation regarding size,but as illustrated in FIG. 2, a distance (d) between the center (c1) ofthe optical filter 500 and the center (c2) of the opening 500 a may befor example larger than the size of one pixel in the image sensor 100.Herein, desirable resolution may be obtained.

The image sensor 100 may be an organic image sensor, an inorganic imagesensor, or a combination thereof, for example a silicon image sensor, anorganic material image sensor, a quantum dot image sensor, etc.

The image sensor 100 includes a visible light image sensor 200configured to sense visible light and a non-visible light image sensor300 configured to sense at least one type of non-visible light. Thevisible light image sensor 200 and the non-visible light image sensor300 may be stacked, and herein, the non-visible light image sensor 300may be positioned closer to the optical filter 500 than the visiblelight image sensor 200.

The visible light image sensor 200 may include a blue light detectingdevice configured to selectively sense or absorb light in a bluewavelength region, a green light detecting device configured toselectively sense or absorb light in a green wavelength region and a redlight detecting device configured to selectively sense or absorb lightin a red wavelength region, and the blue light detecting device, thegreen light detecting device and the red light detecting device may beindependently a photo-sensing device or a photoelectronic device. Thephoto-sensing device may be, for example a photodiode. Thephotoelectronic device may include, for example, a pair of electrodesfacing each other, and a visible light absorption layer between the pairof electrodes and configured to selectively absorb one of blue, greenand red light.

The non-visible light image sensor 300 may be a non-visible lightdetecting device configured to selectively sense or absorb infraredlight or ultraviolet light, and the non-visible light detecting devicemay be a photo-sensing device or a photoelectronic device. Thephoto-sensing device may be, for example, a photodiode. Thephotoelectronic device may include, for example, a pair of electrodesfacing each other, and a non-visible light absorption layer configuredto selectively absorb infrared light or ultraviolet light.

The visible light image sensor 200 senses visible light and may obtain avisible light image according to sensed information. The non-visiblelight image sensor 300 senses infrared light or visible light and mayobtain a non-visible light image according to sensed information.

Herein, a region passing non-visible light is differentiated from aregion passing visible light by using the optical filter 500 having theopening 500 a, and thus an image shift between the visible light imageand the non-visible light image may occur. In other words, as describedabove, because the visible light image may be obtained from the visiblelight passing the optical filter 500 and the opening 500 a, while thenon-visible light image may be obtained from infrared light or visiblelight passing only through the opening 500 a, the visible light imageand the non-visible light image may be imaged in different positions andthus cause the image shift between the visible light image and thenon-visible light image. Accordingly, the distance information of anobject may be obtained depending on a degree of the image shift.

FIG. 3 is a schematic view showing the position of an image depending onthe distance of an object.

Referring to FIG. 3, when a plurality of objects (a, b, c) is present indifferent distances from the lens 400, the object (a) present at a pointagreeing with the focal distance of the lens 400 may obtain a firstimage (Pa) from the visible light and the non-visible light passing thelenses 400 and 600 and the optical film 500, while the objects (b and c)closer or farther from the focal distance of the lens 400 may have asecond image (Pb) and a third image (Pc) in different positions from thefirst image Pa. The distance information of the objects (a, b, c) may bepredicted by reflecting degree (Δd_(ab)) of the image shift between thefirst image (Pa) and the second image (Pb) and degree (Δd_(ac)) of theimage shift between the first image (Pa) and the third image (Pc).

FIG. 4 is a schematic view showing a relationship between the imageshift and the object distance in the electronic device of FIG. 1.

For example, referring to FIG. 4, the relationship between the imageshift and the object distance may be calculated from the followingrelationship equation.

${\Delta \; x} \approx {{f\left( {\frac{1}{Z} - \frac{1}{Z_{0}}} \right)}\frac{f}{f - c_{z}}\Delta \; c_{x}}$

Herein, Δx indicates an image shift, Z indicates an object distance, findicates a focus length, Z₀ indicates plane of focus, c_(z) indicates adistance between lens and an optical filter, and Δc_(x) indicates adistance from the optical axis of the lens to the opening center of theoptical filter.

For example, assuming that f=49.8 mm, Z₀=3000 mm, c_(z)=−10 mm, andΔc_(x)=6 mm, the relation between the image shift and the objectdistance may be expressed as in FIGS. 5 and 6.

FIG. 5 schematically shows the image shift, and FIG. 6 is a graphshowing the relationship between the image shift and the object distanceaccording to example embodiments.

Referring to FIGS. 5 and 6, the object distance may be predicted fromthe image shift.

In this way, a region passing the non-visible light is differentiatedfrom a region passing the visible light by using the optical filter 500having the opening 500 a. Accordingly, an image shift between thevisible light image obtained from the visible light and the non-visiblelight image obtained from the non-visible light occurs, and an objectdistance may be obtained therefrom.

Herein, the visible light passes the optical filter 500 and the opening500 a of the optical filter 500 and is sensed in an image sensor withreduced or no light loss and thus may realize a satisfactory visiblelight image. In other words, the satisfactory visible light image may beobtained with reduced or no light loss by using non-visible light (e.g.,infrared light or ultraviolet light) for obtaining a reference imageabout an object distance.

However, when a part of visible light, for example, red light, bluelight, and/or green light, is used to obtain the reference image aboutan object distance, the reference image may be obtained by using aseparate color filter, and herein, the color filter may absorb, reflect,and/or block the visible light and cause loss of the visible light.

Hereinafter, one example of an image sensor 100 is illustrated.

The image sensor according to example embodiments has a pixel arrayhaving a matrix format in which a unit pixel group including a pluralityof pixels is repeatedly arranged along a row and a column.

The unit pixel group includes at least one pixel sensing visible light(hereinafter, referred to as ‘visible light sensing pixel’) and a pixelsensing at least one type of non-visible light (hereinafter, referred toas ‘non-visible light sensing pixel’).

FIG. 7 is a top plan view showing a unit pixel group of an image sensoraccording to example embodiments.

Referring to FIG. 7, the unit pixel group 10 of an image sensoraccording to example embodiments includes a pixel 1 (PX₁), a pixel 2(PX₂), a pixel 3 (PX₃), and a pixel 4 (PX₄) arranged in two rows and twocolumns (2*2). Three of the four pixels, i.e., the pixel 1 (PX₁), thepixel 2 (PX₂), the pixel 3 (PX₃) and the pixel 4 (PX₄), may be visiblelight sensing pixels to sense three primary colors, and the last one maybe a non-visible light sensing pixel sensing at least one type ofnon-visible light. However, the visible light sensing pixels and thenon-visible light sensing pixel may be added or omitted, as needed.

For example, when the pixel 1 (PX₁), the pixel 2 (PX₂), and the pixel 3(PX₃) are visible light sensing pixels and pixel 4 (PX₄) is anon-visible light sensing pixel, pixel 1 (PX₁), the pixel 2 (PX₂) andpixel 3 (PX₃) may detect light having different wavelength regions fromeach other in the visible ray wavelength region. For example, among thevisible light sensing pixels, the pixel 1 (PX₁) may be a pixel sensingvisible light having a maximum absorption wavelength (λ_(max)) of about500 nm to about 580 nm; the pixel 2 (PX₂) may be a pixel sensing visiblelight having a maximum absorption wavelength (λ_(max)) of greater thanor equal to about 400 nm and less than about 500 nm; and the pixel 3(PX₃) may be a pixel sensing visible light having a maximum absorptionwavelength (λ_(max)) of greater than about 580 nm and less than or equalto about 700 nm.

For example, the pixel 1 (PX₁) may be a green pixel selectively sensinggreen light, the pixel 2 (PX₂) may be a blue pixel selectively sensingblue light, and the pixel 3 (PX₃) may be a red pixel selectively sensingred light. However, it is not limited thereto, and the arrangement andthe order of pixels may be changed.

The pixel 4 (PX₄), which is a non-visible light sensing pixel, may be apixel selectively sensing ultraviolet light or infrared light having amaximum absorption wavelength (λ_(max)) of less than about 400 nm orgreater than about 700 nm. The infrared light may have a maximumabsorption wavelength (λ_(max)), for example, from greater than about700 nm to 3 μm, and within the range, the maximum absorption wavelength(λ_(max)) may be, for example, from about 800 nm to about 1500 nm.

FIG. 8 is a top plan view schematically showing a unit pixel group ofimage sensor according to example embodiments, and FIG. 9 is across-sectional view schematically showing an image sensor of FIG. 8.

In FIGS. 8 and 9, for better understanding and ease of description, thevisible light-sensing pixels are illustrated as a green pixel (G), ablue pixel (B), and a red pixel (R), and the non-visible light sensingpixel is illustrated as an infrared light sensing pixel (I), withoutlimitation. In addition, the arrangement and the organization of thegreen pixel (G), blue pixel (B), the red pixel (R) and the infraredlight sensing pixel (I) shown in FIGS. 8 and 9 may be variously changed.

Referring to FIGS. 8 and 9, an image sensor 100 according to exampleembodiments includes a semiconductor substrate 110, a lower insulationlayer 60, a color filter layer 70, an upper insulation layer 80, and aninfrared light photoelectronic device 90.

The semiconductor substrate 110 may be a silicon substrate, and isintegrated with a photo-sensing device 50, a transmission transistor(not shown), and a charge storage device 55. The photo-sensing devices50 may be, for example, a photodiode.

The photo-sensing device 50, the transmission transistor (not shown),and the charge storage device 55 may be integrated in each pixel, andfor example, a green photo-sensing device 50G and a transmissiontransistor may be integrated in each green pixel (G), a bluephoto-sensing device 50B and a transmission transistor may be integratedin each blue pixel (B), a red photo-sensing device 50R and atransmission transistor may be integrated in each red pixel (R), and acharge storage device 55 and a transmission transistor may be integratedin each infrared light sensing pixel (I). The charge storage device 55is electrically connected with the infrared light photoelectronic device90 that will be described later.

The green photo-sensing device 50G, the blue photo-sensing device 50B,and the red photo-sensing device 50R may be spaced apart from each otherin a horizontal direction.

The photo-sensing device 50 senses light, the information sensed by thephoto-sensing device may be transferred by the transmission transistor,the charge storage device 55 is electrically connected with the infraredlight photoelectronic device 90, and the information of the chargestorage device 55 may be transferred by the transmission transistor.

A metal wire (not shown) and a pad (not shown) are formed on thesemiconductor substrate 110. In order to decrease signal delay, themetal wire and pad may be made of a metal having relatively lowresistivity, for example, aluminum (Al), copper (Cu), silver (Ag), andalloys thereof, but are not limited thereto. Further, it is not limitedto the structure, and the metal wire and pad may be positioned under thephoto-sensing device 50.

The lower insulation layer 60 is formed on the metal wire and the pad.The lower insulation layer 60 may be made of an inorganic insulatingmaterial (e.g., a silicon oxide and/or a silicon nitride), or a lowdielectric constant (low K) material (e.g., SiC, SiCOH, SiCO, and SiOF).The lower insulation layer 60 has a trench exposing the charge storagedevice 55. The trench may be filled with fillers. The lower insulationlayer 60 may be omitted.

The color filter layer 70 is formed on the lower insulation layer 60.The color filter layer 70 may be formed in the visible light-sensingpixel, and may be formed with a color filter selectively transmittinglight having different wavelength regions from each other according toeach visible light-sensing pixel in the visible ray wavelength region.For example, the green pixel (G) may be formed with a green filter 70Gselectively transmitting green light having a maximum absorptionwavelength (λ_(max)) from about 500 nm to about 580 nm; the blue pixel(B) may be formed with a blue filter 70B selectively transmitting greenlight having a maximum absorption wavelength (λ_(max)) of greater thanor equal to about 400 nm and less than about 500 nm; and the red pixel(R) may be formed with a red filter 70R selectively transmitting a redlight having a maximum absorption wavelength (λ_(max)) of greater thanabout 580 nm and less than or equal to about 700 nm.

The green filter 70G selectively transmits light in a green wavelengthregion and transfers to a green photo-sensing device 50G; the bluefilter 70B selectively transmits light in a blue wavelength region andtransfers to a blue photo-sensing device 50B; and the red filter 70Rselectively transmits light in a red wavelength region and transfers toa red photo-sensing device 50R.

The color filter layer 70 may be omitted.

The upper insulation layer 80 is formed on the color filter 70. Theupper insulation layer 80 may eliminate a step caused by the colorfilter layer 70 and smoothes the surface. The upper insulation layer 80and the lower insulation layer 60 may include a contact hole (not shown)exposing a pad, and a through-hole 85 exposing the charge storage device55.

The infrared light photoelectronic device 90 is formed on the upperinsulation layer 80.

The infrared light photoelectronic device 90 includes a pixel electrode91, an infrared light absorption layer 92 and a common electrode 93.

Either the pixel electrode 91 or the common electrode 93 is an anode,and the other is a cathode. For example, the pixel electrode 91 may bean anode, and the common electrode 93 may be a cathode.

Both the pixel electrode 91 and the common electrode 93 may belight-transmitting electrodes or semi light-transmitting electrodes. Thelight-transmitting electrode or the semi light-transmitting electrodemay be made of, for example, a transparent conductor (e.g., indium tinoxide (ITO) or indium zinc oxide (IZO)), or may be a metal thin layerhaving a relatively thin thickness of several nanometers or several tensof nanometers or a metal thin layer having a relatively thin thicknessof several nanometers to several tens of nanometers doped with a metaloxide.

The infrared light absorption layer 92 selectively absorbs light in aninfrared region, for example, at least one of a near-infrared region, amid-infrared region and a far-infrared region.

The infrared light absorption layer 92 may selectively absorb lighthaving a maximum absorption wavelength (λ_(max)) of, for example,greater than about 700 nm, within the range, it may selectively absorblight having a maximum absorption wavelength (λ_(max)) of, for example,greater than about 700 nm to about 3 μm; and within the range, it mayselectively absorb light having a maximum absorption wavelength(λ_(max)) of, for example, about 800 nm to about 1500 nm. The light inother regions besides the infrared ray wavelength region may be passedthrough the infrared light absorption layer 92 as it is.

The infrared light absorption layer 92 may include, for example, ap-type semiconductor and an n-type semiconductor, and the p-typesemiconductor and the n-type semiconductor may form a pn junction. Atleast one of the p-type semiconductor and the n-type semiconductor mayselectively absorb light in an infrared region, and may selectivelyabsorb light in an infrared ray wavelength region to generate excitons,and then the generated excitons may be separated into holes andelectrons to provide a photoelectronic effect.

The p-type semiconductor and the n-type semiconductor may include atleast one organic material. The organic material may be any materialthat selectively absorbs light in an infrared region without particularlimitation, and at least one of the p-type semiconductor and the n-typesemiconductor may include, for example, a quinoid metal complexcompound, a cyanine compound, an ammonium compound, a diammoniumcompound, a triarylmethane compound, a dipyrromethene compound, adiquinone compound, a naphthoquinone compound, an anthraquinonecompound, a squarylium compound, a rylium compound, a ryleme compound, aphthalocyanine compound, a naphthalocyanine compound, a perylenecompound, a squaraine compound, a boron dipyrromethene compound, anickel-dithiol complex compound, merocyanine, diketopyrrolopyrrole, aderivative thereof, or a combination thereof, but is not limitedthereto. For example, the p-type semiconductor may be merocyanine,diketopyrrolopyrrole, a boron dipyrromethene compound, anaphthalocyanine compound, a squaraine compound, a derivative thereof,or a combination thereof, and the n-type semiconductor may be C60, C70,thiophene, a derivative thereof, or a combination thereof, but is notlimited thereto.

The infrared light absorption layer 92 may be a single layer or amultilayer. The infrared light absorption layer 92 may be, for examplean intrinsic layer (I layer), a p-type layer/I layer, an I layer/n-typelayer, a p-type layer/I layer/n-type layer, a p-type layer/n-type layer,etc.

The intrinsic layer (I layer) may include the p-type semiconductor andthe n-type semiconductor in a volume ratio of about 1:100 to about100:1. The p-type semiconductor and the n-type semiconductor may bemixed in a volume ratio of about 1:50 to about 50:1, about 1:10 to about10:1, or about 1:1. When the p-type and n-type semiconductors have acomposition ratio within the range, an exciton may be effectivelyproduced and a pn junction may be effectively formed.

The p-type layer may include the p-type semiconductor, and the n-typelayer may include the n-type semiconductor.

The infrared light absorption layer 92 may have a thickness of about 1nm to about 500 nm, and specifically, about 5 nm to about 300 nm. Withinthe thickness range, the infrared light absorption layer 92 mayeffectively absorb light in an infrared region, effectively separateholes from electrons, and deliver them, thereby effectively improvingphotoelectronic conversion efficiency.

The infrared light absorption layer 92 may be formed on the wholesurface of the image sensor 100. Thereby, as the infrared light may beabsorbed on the whole surface of the image sensor, the light area may beincreased to provide relatively high light-absorptive efficiency.

The pixel electrode 91, the infrared ray absorption layer 92 and thecommon electrode 93 form an infrared light photoelectronic device 90. Inother words, when light enters from the common electrode 93, and thenlight in the infrared ray wavelength region is selectively absorbed bythe infrared light absorption layer 92, excitons may be generated in theinfrared light absorption layer 92. The excitons are separated intoholes and electrons, the separated holes are transferred to an anodeside, which is one of the pixel electrode 91 and the common electrode93, and the separated electrons are transferred into a cathode side,which is one of the pixel electrode 91 and the common electrode 93, soas to flow a current. The separated electrons or holes may be gatheredto the charge storage device 55.

A focusing lens (not shown) may be further formed on the commonelectrode 93. The focusing lens may control a direction of incidentlight and gather the light in one region.

By disposing the infrared ray absorption layer 92 on the visible lightsensing pixel, light in the infrared region flowing into the visiblelight-sensing pixel may be preliminarily blocked, so the image sensor100 does not require an additional infrared ray filter (IR filter).

The structure and the process of the image sensor 100 may be simplifiedsince the infrared light-sensing pixel is separated from the visiblelight-sensing pixel, so the infrared light signal transmission structurebetween the infrared light photoelectronic device 90 and the chargestorage device 55 does not penetrate through the visible light-sensingpixel. When a signal transmission structure of the infrared light ispositioned in the visible light-sensing pixel, the color filter area maybe reduced to provide an area of the signal transmission structure, sothe aperture ratio of each pixel may be decreased, and the process maybe complicated. But according to example embodiments, by separatelyproviding an infrared-sensing pixel, the aperture ratio of the visiblelight-sensing pixel may be sufficiently ensured, and the process may besimplified.

In example embodiments, the image sensor 100 including the visible lightimage sensor 200, for example, a photo-sensing device, and thenon-visible light image sensor 300, for example, a photoelectronicdevice, are disclosed. However, the visible light image sensor 200 mayinclude a photo-sensing device, a photoelectronic device or acombination thereof, and the non-visible light image sensor 300 mayinclude a photo-sensing device or a photoelectronic device.

FIG. 10 is a top plan view showing a unit pixel group of an image sensoraccording to example embodiments.

Referring to FIG. 10, the unit pixel group 20 of image sensor accordingto example embodiments includes pixel 1 (PX₁), pixel 2 (PX₂), pixel 3(PX₃), and pixel 4 (PX₄) which are arranged along two rows and twocolumns.

However, in the unit pixel group 20 of the image sensor according toexample embodiments, at least one of the pixels, i.e., pixel 1 (PX₁),pixel 2 (PX₂), pixel 3 (PX₃), and pixel 4 (PX₄), may have a differentarea from the others, unlike the example embodiment illustrated in FIG.7. Each pixel area of the unit pixel group 20 may be variously changedas needed.

For example, the pixel 1 (PX₁) may have the larger area than the pixel 2(PX₂), pixel 3 (PX₃), and pixel 4 (PX₄) as illustrated in FIG. 10.

Furthermore, the pixel 2 (PX₂) and the pixel 3 (PX₃) may have the samearea.

Although not shown, the pixel 1 (PX₁) may have the largest area, and thepixel 2 (PX₂), pixel 3 (PX₃), and pixel 4 (PX₄) may have the same area.

For example, in FIG. 10, the pixel 1 (PX₁) may have the largest area,the pixel 2 (PX₂) and the pixel 3 (PX₃) may have the same area, and thepixel 4 (PX₄) may have the smallest area.

Although not shown, the pixel 1 (PX₁) may have the largest area, thepixel 2 (PX₂) and the pixel 3 (PX₃) may have the smallest area, and thepixel 4 (PX₄) may have an area that is smaller than the area of thepixel 1 (PX₁) and larger than the area of the pixel 2 (PX₂) or the areaof the pixel 3 (PX₃).

For example, the pixel 1 (PX₁) may be a green pixel (G), the pixel 2(PX₂) may be a blue pixel (B), the pixel 3 (PX₃) may be a red pixel (R),and the pixel 4 (PX₄) may be a visible light-sensing pixel (I).

For example, the green pixel (G) may have the larger area than the areaof the red pixel (R), the blue pixel (B), and the infrared light-sensingpixel (I).

For example, the red pixel (R) and the blue pixel (B) may have the samearea.

For example, the green pixel (G) may have the largest area, and the redpixel (R), the blue pixel (B), and the infrared light-sensing pixel (I)may have the same area.

For example, the green pixel (G) may have the largest area, the redpixel (R) and the blue pixel (B) may have the same area, and theinfrared light-sensing pixel (I) may have the smallest area.

For example, the green pixel (G) may have the largest area, the redpixel (R) and the blue pixel (B) may have the smallest area, and theinfrared light-sensing pixel (I) may have an area that is smaller thanthe area of the green pixel (G) and larger than the area of the redpixel (R) or the area of the blue pixel (B).

As in the above, by providing each pixel of the unit pixel group 20 withthe different area, even if the area of the visible light-sensing pixelis decreased due to the infrared light-sensing pixel (I), the visiblelight-sensing efficiency may be reduced or prevented from beingdecreased, and the relatively high resolution image sensor may beaccomplished by adjusting the visible light-sensing pixel ratio.

While this disclosure has been described in connection with what ispresently considered to be practical example embodiments, it is to beunderstood that the inventive concepts are not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. An electronic device comprising: a lens; an optical filter asymmetric to an optical axis of the lens, the optical filter having an opening and configured to transmit visible light and block at least one type of non-visible light; and an image sensor including a visible light image sensor and a non-visible light image sensor, the visible light image sensor configured to sense the visible light and the non-visible light image sensor configured to sense the at least one type of non-visible light.
 2. The electronic device of claim 1, wherein the at least one type of non-visible light is one of infrared light and ultraviolet light.
 3. The electronic device of claim 1, wherein the visible light image sensor obtains a visible light image from the visible light passing the optical filter including the opening; the non-visible light image sensor obtains a non-visible light image from the non-visible light passing the opening of the optical filter; and distance information of an object is obtained from a position difference between the visible light image and the non-visible light image.
 4. The electronic device of claim 1, wherein the opening is at one side of the lens based on the optical axis of the lens.
 5. The electronic device of claim 1, wherein the opening is one of circular and polygonal.
 6. The electronic device of claim 1, wherein the optical filter is between the lens and the image sensor.
 7. The electronic device of claim 1, wherein the image sensor includes a plurality of pixels; and a distance between a center of the optical filter and a center of the opening is larger than a size of one of the plurality of pixels.
 8. The electronic device of claim 1, wherein the visible light image sensor and the non-visible light image sensor are stacked.
 9. The electronic device of claim 8, wherein the non-visible light image sensor is closer to the optical filter than the visible light image sensor.
 10. The electronic device of claim 1, wherein the visible light image sensor comprises: a blue light detecting device configured to one of selectively sense and selectively absorb light in a blue wavelength region; a green light detecting device configured to one of selectively sense and selectively absorb light in a green wavelength region; and a red light detecting device configured to one of selectively sense and selectively absorb light in a red wavelength region.
 11. The electronic device of claim 10, wherein the blue light detecting device, the green light detecting device and the red light detecting device are independently one of a photo-sensing device and a photoelectronic device.
 12. The electronic device of claim 11, wherein at least one of the blue light detecting device, the green light detecting device and the red light detecting device is the photo-sensing device; and the visible light image sensor further comprises a color filter overlapping the photo-sensing device.
 13. The electronic device of claim 11, wherein at least one of the blue light detecting device, the green light detecting device, and the red light detecting device is the photoelectronic device; and the photoelectronic device includes, a pair of electrodes facing each other, and a visible light absorption layer between the pair of electrodes, the visible light absorption layer configured to selectively absorb one of the light in the blue wavelength region, the green wavelength region, and the red wavelength region.
 14. The electronic device of claim 1, wherein the non-visible light image sensor is a non-visible light detecting device configured to one of selectively sense and selectively absorb one of infrared light and ultraviolet light; and the non-visible light detecting device is one of a photo-sensing device and a photoelectronic device.
 15. The electronic device of claim 14, wherein the non-visible light detecting device is the photoelectronic device; and the photoelectronic device includes, a pair of electrodes facing each other, and a non-visible light absorption layer between the pair of electrodes, the non-visible light absorption layer configured to selectively absorb the one of infrared light and ultraviolet light.
 16. The electronic device of claim 15, wherein the non-visible light absorption layer includes at least one organic material.
 17. The electronic device of claim 10, wherein the image sensor includes a plurality of unit pixel groups repeatedly arranged along a row and a column; and each of the plurality of unit pixel groups includes, a non-visible light pixel connected to the non-visible light image sensor, and a plurality of pixels including, a blue pixel including the blue light detecting device, a green pixel including the green light detecting device, and a red pixel including the red light detecting device.
 18. The electronic device of claim 17, wherein the non-visible light pixel is one of an infrared light pixel and an ultraviolet light pixel.
 19. The electronic device of claim 17, wherein one of the blue pixel, the green pixel, and the red pixel has a different area from the other of the plurality of pixels.
 20. The electronic device of claim 19, wherein the green pixel has a larger area than the blue pixel and the red pixel. 